Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
12 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+125 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC, 40 nC
Width
5.1mm
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts
Power MOSFET Modules, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,25
Katrs (Paka ir 5) (bez PVN)
€ 1,512
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,25
Katrs (Paka ir 5) (bez PVN)
€ 1,512
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
30 V
Package Type
LSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.75V
Maximum Power Dissipation
12 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-8 V, +10 V
Maximum Operating Temperature
+125 °C
Length
6.1mm
Typical Gate Charge @ Vgs
18 nC, 40 nC
Width
5.1mm
Number of Elements per Chip
2
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts