Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT

RS noliktavas nr.: 133-0159Ražotājs: Texas InstrumentsRažotāja kods: CSD87355Q5DT
View all in MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

12 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+125 °C

Length

6.1mm

Typical Gate Charge @ Vgs

18 nC, 40 nC

Width

5.1mm

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Produkta apraksts

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,25

Katrs (Paka ir 5) (bez PVN)

€ 1,512

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Izvēlēties iepakojuma veidu

€ 1,25

Katrs (Paka ir 5) (bez PVN)

€ 1,512

Katrs (Paka ir 5) (Ieskaitot PVN)

Dual P-Channel MOSFET, 120 A, 30 V, 8-Pin LSON-CLIP Texas Instruments CSD87355Q5DT
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

30 V

Package Type

LSON-CLIP

Series

NexFET

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.75V

Maximum Power Dissipation

12 W

Transistor Configuration

Dual Base

Maximum Gate Source Voltage

-8 V, +10 V

Maximum Operating Temperature

+125 °C

Length

6.1mm

Typical Gate Charge @ Vgs

18 nC, 40 nC

Width

5.1mm

Number of Elements per Chip

2

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Produkta apraksts

Power MOSFET Modules, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more