Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
2.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Height
0.2mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel NexFET™ Dual MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,852
Katrs (Rulli ir 250) (bez PVN)
€ 1,031
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
€ 0,852
Katrs (Rulli ir 250) (bez PVN)
€ 1,031
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
250 - 250 | € 0,852 | € 213,00 |
500 - 1000 | € 0,81 | € 202,50 |
1250+ | € 0,728 | € 182,00 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
23 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
2.2mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
1.15mm
Typical Gate Charge @ Vgs
8.4 nC @ 4.5 V
Height
0.2mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts