Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
0.913 nC @ 4.5 V
Width
0.6mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Produkta apraksts
P-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,388
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,469
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
€ 0,388
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,469
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
10 - 90 | € 0,388 | € 3,88 |
100 - 190 | € 0,258 | € 2,58 |
200 - 390 | € 0,238 | € 2,38 |
400 - 790 | € 0,22 | € 2,20 |
800+ | € 0,151 | € 1,51 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
20 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
800 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
0.913 nC @ 4.5 V
Width
0.6mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Produkta apraksts