P-Channel MOSFET, 104 A, 20 V, 8-Pin VSON-CLIP Texas Instruments CSD25404Q3T
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Number of Elements per Chip
1
Width
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,20
Katrs (Paka ir 5) (bez PVN)
€ 1,452
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,20
Katrs (Paka ir 5) (bez PVN)
€ 1,452
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 10 | € 1,20 | € 6,00 |
| 15 - 45 | € 0,947 | € 4,74 |
| 50 - 245 | € 0,829 | € 4,14 |
| 250 - 495 | € 0,725 | € 3,62 |
| 500+ | € 0,643 | € 3,22 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
P
Maximum Continuous Drain Current
104 A
Maximum Drain Source Voltage
20 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.15V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
96 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +12 V
Maximum Operating Temperature
+150 °C
Length
3.4mm
Number of Elements per Chip
1
Width
3.4mm
Typical Gate Charge @ Vgs
10.8 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts
P-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products