P-Channel MOSFET, 5 A, 8 V, 9-Pin DSBGA Texas Instruments CSD22204WT

RS noliktavas nr.: 145-7461Ražotājs: Texas InstrumentsRažotāja kods: CSD22204WT
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

8 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

9

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.5mm

Typical Gate Charge @ Vgs

18.9 nC @ 4 V

Width

1.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

0.35mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,085

Katrs (Rulli ir 250) (bez PVN)

€ 0,103

Katrs (Rulli ir 250) (Ieskaitot PVN)

P-Channel MOSFET, 5 A, 8 V, 9-Pin DSBGA Texas Instruments CSD22204WT

€ 0,085

Katrs (Rulli ir 250) (bez PVN)

€ 0,103

Katrs (Rulli ir 250) (Ieskaitot PVN)

P-Channel MOSFET, 5 A, 8 V, 9-Pin DSBGA Texas Instruments CSD22204WT
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

8 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

9

Maximum Drain Source Resistance

14 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.5mm

Typical Gate Charge @ Vgs

18.9 nC @ 4 V

Width

1.5mm

Number of Elements per Chip

1

Forward Diode Voltage

1V

Height

0.35mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Philippines

Produkta apraksts

P-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more