Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT

RS noliktavas nr.: 162-9739Ražotājs: Texas InstrumentsRažotāja kods: CSD19536KTTT
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

272 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

4.83mm

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

€ 227,50

€ 4,55 Katrs (Rulli ir 50) (bez PVN)

€ 275,28

€ 5,506 Katrs (Rulli ir 50) (Ieskaitot PVN)

Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT

€ 227,50

€ 4,55 Katrs (Rulli ir 50) (bez PVN)

€ 275,28

€ 5,506 Katrs (Rulli ir 50) (Ieskaitot PVN)

Texas Instruments NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

272 A

Maximum Drain Source Voltage

100 V

Series

NexFET

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.8 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

118 nC @ 0 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

4.83mm

Izcelsmes valsts

Philippines

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more