Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,65
Katrs (Tubina ir 50) (bez PVN)
€ 5,626
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 4,65
Katrs (Tubina ir 50) (bez PVN)
€ 5,626
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 4,65 | € 232,50 |
100 - 200 | € 3,70 | € 185,00 |
250+ | € 3,50 | € 175,00 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
259 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.2V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
118 nC @ 10 V
Width
4.7mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts