N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
16.51mm
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,40
Katrs (Paka ir 5) (bez PVN)
€ 1,694
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,40
Katrs (Paka ir 5) (bez PVN)
€ 1,694
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 20 | € 1,40 | € 7,00 |
| 25 - 45 | € 1,05 | € 5,25 |
| 50+ | € 1,05 | € 5,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
16.51mm
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products