N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 Texas Instruments CSD19534KCS
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,25
Katrs (Tubina ir 50) (bez PVN)
€ 1,512
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,25
Katrs (Tubina ir 50) (bez PVN)
€ 1,512
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 50 - 50 | € 1,25 | € 62,50 |
| 100 - 200 | € 1,10 | € 55,00 |
| 250 - 450 | € 1,05 | € 52,50 |
| 500 - 700 | € 0,985 | € 49,25 |
| 750+ | € 0,923 | € 46,15 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
NexFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
118 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.67mm
Typical Gate Charge @ Vgs
17.1 nC @ 0 V
Width
4.7mm
Number of Elements per Chip
1
Forward Diode Voltage
1.1V
Height
16.51mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products