N-Channel MOSFET, 157 A, 80 V, 8-Pin VSON-CLIP Texas Instruments CSD19502Q5BT
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,95
Katrs (Paka ir 2) (bez PVN)
€ 3,57
Katrs (Paka ir 2) (Ieskaitot PVN)
2
€ 2,95
Katrs (Paka ir 2) (bez PVN)
€ 3,57
Katrs (Paka ir 2) (Ieskaitot PVN)
2
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 2 - 8 | € 2,95 | € 5,90 |
| 10 - 18 | € 2,80 | € 5,60 |
| 20 - 48 | € 2,55 | € 5,10 |
| 50 - 98 | € 2,30 | € 4,60 |
| 100+ | € 2,20 | € 4,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
157 A
Maximum Drain Source Voltage
80 V
Package Type
VSON-CLIP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.3V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
195 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Height
1.05mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products