Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.7mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.67mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,05
Katrs (Tubina ir 50) (bez PVN)
€ 1,27
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 1,05
Katrs (Tubina ir 50) (bez PVN)
€ 1,27
Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
60 V
Series
NexFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
18 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.6V
Maximum Power Dissipation
79 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
14 nC @ 10 V
Width
4.7mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.67mm
Number of Elements per Chip
1
Height
16.51mm
Minimum Operating Temperature
-55 °C
Produkta apraksts