N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS

RS noliktavas nr.: 145-6646Ražotājs: Texas InstrumentsRažotāja kods: CSD18537NKCS
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

54 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.67mm

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,05

Katrs (Tubina ir 50) (bez PVN)

€ 1,27

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS

€ 1,05

Katrs (Tubina ir 50) (bez PVN)

€ 1,27

Katrs (Tubina ir 50) (Ieskaitot PVN)

N-Channel MOSFET, 54 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18537NKCS
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

54 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.6V

Maximum Power Dissipation

79 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

4.7mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.67mm

Number of Elements per Chip

1

Height

16.51mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more