Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,00
Katrs (Paka ir 5) (bez PVN)
€ 1,21
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,00
Katrs (Paka ir 5) (bez PVN)
€ 1,21
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,00 | € 5,00 |
25 - 45 | € 0,704 | € 3,52 |
50 - 245 | € 0,616 | € 3,08 |
250 - 495 | € 0,53 | € 2,65 |
500+ | € 0,471 | € 2,36 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
69 A
Maximum Drain Source Voltage
60 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
12.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
17 nC @ 10 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Produkta apraksts