N-Channel MOSFET, 69 A, 60 V, 8-Pin SON Texas Instruments CSD18534Q5A

RS noliktavas nr.: 827-4896Ražotājs: Texas InstrumentsRažotāja kods: CSD18534Q5A
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

60 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,00

Katrs (Paka ir 5) (bez PVN)

€ 1,21

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 69 A, 60 V, 8-Pin SON Texas Instruments CSD18534Q5A
Izvēlēties iepakojuma veidu

€ 1,00

Katrs (Paka ir 5) (bez PVN)

€ 1,21

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 69 A, 60 V, 8-Pin SON Texas Instruments CSD18534Q5A
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 1,00€ 5,00
25 - 45€ 0,704€ 3,52
50 - 245€ 0,616€ 3,08
250 - 495€ 0,53€ 2,65
500+€ 0,471€ 2,36

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

69 A

Maximum Drain Source Voltage

60 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more