Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
118 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Series
NexFET
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,75
Katrs (tiek piegadats Tubina) (bez PVN)
€ 2,118
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
€ 1,75
Katrs (tiek piegadats Tubina) (bez PVN)
€ 2,118
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Penālis |
---|---|---|
5 - 45 | € 1,75 | € 8,75 |
50 - 95 | € 1,40 | € 7,00 |
100 - 245 | € 1,25 | € 6,25 |
250 - 495 | € 1,15 | € 5,75 |
500+ | € 0,985 | € 4,92 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
118 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
192 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
14 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
16.51mm
Series
NexFET
Produkta apraksts