N-Channel MOSFET, 169 A, 60 V, 3-Pin TO-220 Texas Instruments CSD18532KCS
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,10
Katrs (tiek piegadats Tubina) (bez PVN)
€ 2,541
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
€ 2,10
Katrs (tiek piegadats Tubina) (bez PVN)
€ 2,541
Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Penālis |
|---|---|---|
| 5 - 45 | € 2,10 | € 10,50 |
| 50 - 95 | € 1,70 | € 8,50 |
| 100 - 245 | € 1,35 | € 6,75 |
| 250 - 495 | € 1,25 | € 6,25 |
| 500+ | € 1,20 | € 6,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
169 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
5.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.67mm
Typical Gate Charge @ Vgs
21 nC @ 4.5 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
16.51mm
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products