Texas Instruments NexFET N-Channel MOSFET, 134 A, 60 V, 8-Pin VSONP CSD18531Q5A

RS noliktavas nr.: 827-4886Ražotājs: Texas InstrumentsRažotāja kods: CSD18531Q5A
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

134 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

€ 8,00

€ 1,60 Katrs (Paka ir 5) (bez PVN)

€ 9,68

€ 1,936 Katrs (Paka ir 5) (Ieskaitot PVN)

Texas Instruments NexFET N-Channel MOSFET, 134 A, 60 V, 8-Pin VSONP CSD18531Q5A
Izvēlēties iepakojuma veidu

€ 8,00

€ 1,60 Katrs (Paka ir 5) (bez PVN)

€ 9,68

€ 1,936 Katrs (Paka ir 5) (Ieskaitot PVN)

Texas Instruments NexFET N-Channel MOSFET, 134 A, 60 V, 8-Pin VSONP CSD18531Q5A
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 1,60€ 8,00
25 - 45€ 1,55€ 7,75
50 - 120€ 1,40€ 7,00
125 - 245€ 1,25€ 6,25
250+€ 1,20€ 6,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

134 A

Maximum Drain Source Voltage

60 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.8mm

Typical Gate Charge @ Vgs

18 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more