N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A

RS noliktavas nr.: 827-4883Ražotājs: Texas InstrumentsRažotāja kods: CSD18504Q5A
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,967

Katrs (Paka ir 5) (bez PVN)

€ 1,17

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A
Izvēlēties iepakojuma veidu

€ 0,967

Katrs (Paka ir 5) (bez PVN)

€ 1,17

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 0,967€ 4,84
25 - 45€ 0,919€ 4,60
50 - 120€ 0,829€ 4,14
125 - 245€ 0,743€ 3,72
250+€ 0,71€ 3,55

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

1.1mm

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more