N-Channel MOSFET, 204 A, 40 V, 8-Pin VSON-CLIP Texas Instruments CSD18502Q5B
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,50
Katrs (tiek piegadats Rulli) (bez PVN)
€ 3,025
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
€ 2,50
Katrs (tiek piegadats Rulli) (bez PVN)
€ 3,025
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 5 - 20 | € 2,50 | € 12,50 |
| 25 - 45 | € 2,40 | € 12,00 |
| 50 - 120 | € 2,15 | € 10,75 |
| 125 - 245 | € 1,95 | € 9,75 |
| 250+ | € 1,85 | € 9,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
204 A
Maximum Drain Source Voltage
40 V
Package Type
VSON-CLIP
Series
NexFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
5.1mm
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
25 nC @ 4.5 V
Number of Elements per Chip
1
Transistor Material
Si
Height
1.05mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products