N-Channel MOSFET, 11 A, 30 V, 8-Pin VSCONP Texas Instruments CSD17579Q3AT
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
VSCONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3.5mm
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V
Height
0.9mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,333
Katrs (Rulli ir 250) (bez PVN)
€ 0,403
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
€ 0,333
Katrs (Rulli ir 250) (bez PVN)
€ 0,403
Katrs (Rulli ir 250) (Ieskaitot PVN)
250
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
30 V
Package Type
VSCONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14.2 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
3.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.5mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
3.5mm
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V
Height
0.9mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Izcelsmes valsts
Philippines
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products