N-Channel MOSFET, 5 A, 30 V, 6-Pin SON Texas Instruments CSD17313Q2

RS noliktavas nr.: 827-4849Ražotājs: Texas InstrumentsRažotāja kods: CSD17313Q2
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Width

2mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

0.8mm

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,476

Katrs (Paka ir 10) (bez PVN)

€ 0,576

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 5 A, 30 V, 6-Pin SON Texas Instruments CSD17313Q2

€ 0,476

Katrs (Paka ir 10) (bez PVN)

€ 0,576

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 5 A, 30 V, 6-Pin SON Texas Instruments CSD17313Q2
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,476€ 4,76
50 - 190€ 0,356€ 3,56
200 - 490€ 0,27€ 2,70
500+€ 0,264€ 2,64

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

42 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2mm

Typical Gate Charge @ Vgs

2.1 nC @ 4.5 V

Width

2mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Height

0.8mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more