Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
€ 40.70
€ 0.814 Each (Supplied on a Reel) (Exc. Vat)
€ 49.25
€ 0.985 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
50
€ 40.70
€ 0.814 Each (Supplied on a Reel) (Exc. Vat)
€ 49.25
€ 0.985 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 90 | € 0.814 | € 8.14 |
| 100 - 240 | € 0.636 | € 6.36 |
| 250 - 490 | € 0.611 | € 6.11 |
| 500+ | € 0.589 | € 5.89 |
Technical Document
Specifications
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
47 A
Maximum Drain Source Voltage
30 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Width
3.4mm
Maximum Operating Temperature
+150 °C
Length
3.4mm
Typical Gate Charge @ Vgs
3.9 nC @ 4.5 V
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.1mm
Product details


