N-Channel MOSFET, 73 A, 30 V, 8-Pin VSONP Texas Instruments CSD17307Q5A

RS noliktavas nr.: 162-8540Ražotājs: Texas InstrumentsRažotāja kods: CSD17307Q5A
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

73 A

Maximum Drain Source Voltage

30 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Width

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.8mm

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,343

Katrs (Rulli ir 2500) (bez PVN)

€ 0,415

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 73 A, 30 V, 8-Pin VSONP Texas Instruments CSD17307Q5A

€ 0,343

Katrs (Rulli ir 2500) (bez PVN)

€ 0,415

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 73 A, 30 V, 8-Pin VSONP Texas Instruments CSD17307Q5A
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

73 A

Maximum Drain Source Voltage

30 V

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.8V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Width

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5.8mm

Height

1.1mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more