N-Channel MOSFET, 79 A, 25 V, 8-Pin SON Texas Instruments CSD16406Q3
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,863
Katrs (Paka ir 10) (bez PVN)
€ 1,044
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,863
Katrs (Paka ir 10) (bez PVN)
€ 1,044
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 90 | € 0,863 | € 8,63 |
| 100 - 240 | € 0,62 | € 6,20 |
| 250 - 490 | € 0,582 | € 5,82 |
| 500 - 740 | € 0,545 | € 5,45 |
| 750+ | € 0,536 | € 5,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Width
3.4mm
Transistor Material
Si
Forward Diode Voltage
1V
Minimum Operating Temperature
-55 °C
Height
1.1mm
Series
NexFET
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products