N-Channel MOSFET, 60 A, 25 V, 8-Pin SON Texas Instruments CSD16327Q3

RS noliktavas nr.: 827-4729Ražotājs: Texas InstrumentsRažotāja kods: CSD16327Q3
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Width

3.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,00

Katrs (Paka ir 5) (bez PVN)

€ 1,21

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 25 V, 8-Pin SON Texas Instruments CSD16327Q3
Izvēlēties iepakojuma veidu

€ 1,00

Katrs (Paka ir 5) (bez PVN)

€ 1,21

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 25 V, 8-Pin SON Texas Instruments CSD16327Q3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 1,00€ 5,00
25+€ 0,809€ 4,04

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.4V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

6.2 nC @ 4.5 V

Width

3.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more