Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
6.8 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Produkta apraksts
N-Channel NexFET™ Dual MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,704
Katrs (Paka ir 5) (bez PVN)
€ 0,852
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 0,704
Katrs (Paka ir 5) (bez PVN)
€ 0,852
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
21 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
6.8 nC @ 4.5 V
Width
5.1mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Height
1.05mm
Produkta apraksts