Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,186
Katrs (Paka ir 10) (bez PVN)
€ 0,225
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,186
Katrs (Paka ir 10) (bez PVN)
€ 0,225
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
25 V
Series
NexFET
Package Type
WSON
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.55V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2mm
Typical Gate Charge @ Vgs
2 nC @ 4.5 V
Width
2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Produkta apraksts