Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Produkta apraksts
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,306
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,37
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
€ 0,306
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,37
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
10 - 10 | € 0,306 | € 3,06 |
20 - 40 | € 0,242 | € 2,42 |
50 - 90 | € 0,199 | € 1,99 |
100 - 240 | € 0,156 | € 1,56 |
250+ | € 0,154 | € 1,54 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.9 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Length
0.64mm
Typical Gate Charge @ Vgs
2 nC @ 0 V
Maximum Operating Temperature
+150 °C
Width
1.04mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.35mm
Produkta apraksts