N-Channel MOSFET, 2.1 A, 12 V, 3-Pin PICOSTAR Texas Instruments CSD13381F4T
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.06 nC @ 4.5 V
Width
0.64mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Produkta apraksts
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,336
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,407
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
€ 0,336
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,407
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
20
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 20 - 20 | € 0,336 | € 6,72 |
| 40 - 80 | € 0,216 | € 4,32 |
| 100 - 480 | € 0,119 | € 2,38 |
| 500 - 980 | € 0,105 | € 2,10 |
| 1000+ | € 0,091 | € 1,82 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
2.1 A
Maximum Drain Source Voltage
12 V
Package Type
PICOSTAR
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.04mm
Typical Gate Charge @ Vgs
1.06 nC @ 4.5 V
Width
0.64mm
Transistor Material
Si
Series
FemtoFET
Minimum Operating Temperature
-55 °C
Height
0.35mm
Produkta apraksts
N-Channel FemtoFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products