Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Width
1.49mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.28mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,762
Katrs (Paka ir 10) (bez PVN)
€ 0,922
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,762
Katrs (Paka ir 10) (bez PVN)
€ 0,922
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
10 - 10 | € 0,762 | € 7,62 |
20 - 40 | € 0,491 | € 4,91 |
50 - 90 | € 0,475 | € 4,75 |
100 - 240 | € 0,381 | € 3,81 |
250+ | € 0,341 | € 3,41 |
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
3.5 A
Maximum Drain Source Voltage
12 V
Package Type
DSBGA
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
15.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1mm
Typical Gate Charge @ Vgs
8.6 nC @ 0 V
Width
1.49mm
Transistor Material
Si
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Height
0.28mm