N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT

RS noliktavas nr.: 900-9927Ražotājs: Texas InstrumentsRažotāja kods: CSD13306WT
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

15.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1mm

Typical Gate Charge @ Vgs

8.6 nC @ 0 V

Width

1.49mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.28mm

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,762

Katrs (Paka ir 10) (bez PVN)

€ 0,922

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT

€ 0,762

Katrs (Paka ir 10) (bez PVN)

€ 0,922

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13306WT
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 10€ 0,762€ 7,62
20 - 40€ 0,491€ 4,91
50 - 90€ 0,475€ 4,75
100 - 240€ 0,381€ 3,81
250+€ 0,341€ 3,41

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

15.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

1.9 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1mm

Typical Gate Charge @ Vgs

8.6 nC @ 0 V

Width

1.49mm

Transistor Material

Si

Series

NexFET

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Height

0.28mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more