N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13303W1015

RS noliktavas nr.: 827-4675Ražotājs: Texas InstrumentsRažotāja kods: CSD13303W1015
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

1.65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

1.5mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Width

1mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.38mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,197

Katrs (Paka ir 10) (bez PVN)

€ 0,238

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13303W1015

€ 0,197

Katrs (Paka ir 10) (bez PVN)

€ 0,238

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 3.5 A, 12 V, 6-Pin DSBGA Texas Instruments CSD13303W1015
Noliktavas stāvoklis patreiz nav pieejams

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

12 V

Package Type

DSBGA

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Minimum Gate Threshold Voltage

0.65V

Maximum Power Dissipation

1.65 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

1.5mm

Typical Gate Charge @ Vgs

3.9 nC @ 4.5 V

Width

1mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.38mm

Series

NexFET

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more