Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.25 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
89 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
20.7 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.5V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,65
Katrs (Rulli ir 2500) (bez PVN)
€ 0,786
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,65
Katrs (Rulli ir 2500) (bez PVN)
€ 0,786
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.25 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
89 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
20.7 nC @ 10 V
Height
2.3mm
Forward Diode Voltage
1.5V