N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

RS noliktavas nr.: 171-3625Ražotājs: Taiwan SemiconductorRažotāja kods: TSM4N80CI C0G
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Package Type

ITO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10mm

Height

15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 3,55

Katrs (Rulli ir 1000) (bez PVN)

€ 4,296

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G

€ 3,55

Katrs (Rulli ir 1000) (bez PVN)

€ 4,296

Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 4 A, 800 V, 3-Pin ITO-220 Taiwan Semi TSM4N80CI C0G
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

800 V

Package Type

ITO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

38.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

20 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10mm

Height

15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more