Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,486
Katrs (Rulli ir 2500) (bez PVN)
€ 0,588
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,486
Katrs (Rulli ir 2500) (bez PVN)
€ 0,588
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4.5 A
Maximum Drain Source Voltage
60 V
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
5mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V