Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
9.52 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,107
Katrs (Paka ir 10) (bez PVN)
€ 0,129
Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 0,107
Katrs (Paka ir 10) (bez PVN)
€ 0,129
Katrs (Paka ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
5 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
9.52 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.1mm
Width
1.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts