P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 Taiwan Semi TSM3457CX6 RFG

RS noliktavas nr.: 743-6049Ražotājs: Taiwan SemiconductorRažotāja kods: TSM3457CX6 RFG
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

9.52 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Width

1.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,107

Katrs (Paka ir 10) (bez PVN)

€ 0,129

Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 Taiwan Semi TSM3457CX6 RFG
Izvēlēties iepakojuma veidu

€ 0,107

Katrs (Paka ir 10) (bez PVN)

€ 0,129

Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 5 A, 30 V, 6-Pin SOT-26 Taiwan Semi TSM3457CX6 RFG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-26

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

9.52 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.1mm

Width

1.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel Power MOSFET, Taiwan Semiconductor

MOSFET Transistors, Taiwan Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more