Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
11.1 nC @ 5 V
Height
1.1mm
PRICED TO CLEAR
Yes
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,323
Katrs (Paka ir 25) (bez PVN)
€ 0,391
Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 0,323
Katrs (Paka ir 25) (bez PVN)
€ 0,391
Katrs (Paka ir 25) (Ieskaitot PVN)
25
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
1.5 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
1.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
11.1 nC @ 5 V
Height
1.1mm
PRICED TO CLEAR
Yes