P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG

RS noliktavas nr.: 171-3616Ražotājs: Taiwan SemiconductorRažotāja kods: TSM2309CX RFG
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Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Length

2.9mm

Height

0.95mm

Forward Diode Voltage

1V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,286

Katrs (Rulli ir 3000) (bez PVN)

€ 0,346

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG

€ 0,286

Katrs (Rulli ir 3000) (bez PVN)

€ 0,346

Katrs (Rulli ir 3000) (Ieskaitot PVN)

P-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Taiwan Semi TSM2309CX RFG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

1.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Length

2.9mm

Height

0.95mm

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more