Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
€ 34.50
€ 0.138 Each (Supplied on a Reel) (Exc. Vat)
€ 41.74
€ 0.167 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
250
€ 34.50
€ 0.138 Each (Supplied on a Reel) (Exc. Vat)
€ 41.74
€ 0.167 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
250
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 250 - 450 | € 0.138 | € 6.90 |
| 500 - 950 | € 0.129 | € 6.45 |
| 1000 - 2450 | € 0.122 | € 6.10 |
| 2500+ | € 0.115 | € 5.75 |
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Product details


