Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,349
Katrs (Paka ir 25) (bez PVN)
€ 0,422
Katrs (Paka ir 25) (Ieskaitot PVN)
25
€ 0,349
Katrs (Paka ir 25) (bez PVN)
€ 0,422
Katrs (Paka ir 25) (Ieskaitot PVN)
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 50 | € 0,349 | € 8,72 |
75 - 125 | € 0,302 | € 7,55 |
150 - 475 | € 0,264 | € 6,60 |
500+ | € 0,239 | € 5,98 |
Tehniskie dokumenti
Specifikācija
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V