N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG

RS noliktavas nr.: 171-3659Ražotājs: Taiwan SemiconductorRažotāja kods: TSM090N03CP ROG
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Height

2.3mm

Forward Diode Voltage

1V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,349

Katrs (Paka ir 25) (bez PVN)

€ 0,422

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG
Izvēlēties iepakojuma veidu

€ 0,349

Katrs (Paka ir 25) (bez PVN)

€ 0,422

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK Taiwan Semi TSM090N03CP ROG
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 50€ 0,349€ 8,72
75 - 125€ 0,302€ 7,55
150 - 475€ 0,264€ 6,60
500+€ 0,239€ 5,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

13 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5.8mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.5mm

Typical Gate Charge @ Vgs

7.5 nC @ 4.5 V

Height

2.3mm

Forward Diode Voltage

1V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more