N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-247 STMicroelectronics STW10NK60Z

RS noliktavas nr.: 486-3079Ražotājs: STMicroelectronicsRažotāja kods: STW10NK60Z
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Transistor Material

Si

Typical Gate Charge @ Vgs

50 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Height

20.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,10

Katrs (bez PVN)

€ 1,33

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-247 STMicroelectronics STW10NK60Z

€ 1,10

Katrs (bez PVN)

€ 1,33

Katrs (Ieskaitot PVN)

N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-247 STMicroelectronics STW10NK60Z
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Package Type

TO-247

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

750 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.15mm

Transistor Material

Si

Typical Gate Charge @ Vgs

50 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

15.75mm

Height

20.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more