Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Series
STripFET V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Width
1.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.3mm
Produkta apraksts
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,151
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,183
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
€ 0,151
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,183
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
2.3 A
Maximum Drain Source Voltage
20 V
Series
STripFET V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
40 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Width
1.75mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.3mm
Produkta apraksts
N-Channel STripFET™ V, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.