STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220 STP9NK50Z

RS Stock No.: 920-8708Brand: STMicroelectronicsManufacturers Part No.: STP9NK50Z
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.4mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 85.00

€ 1.70 Each (In a Tube of 50) (Exc. Vat)

€ 102.85

€ 2.057 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220 STP9NK50Z

€ 85.00

€ 1.70 Each (In a Tube of 50) (Exc. Vat)

€ 102.85

€ 2.057 Each (In a Tube of 50) (inc. VAT)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7.2 A, 500 V, 3-Pin TO-220 STP9NK50Z
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Tube
50 - 50€ 1.70€ 85.00
100 - 450€ 1.35€ 67.50
500 - 950€ 1.15€ 57.50
1000 - 4950€ 0.947€ 47.35
5000+€ 0.896€ 44.80

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

7.2 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220

Series

MDmesh, SuperMESH

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.4mm

Typical Gate Charge @ Vgs

32 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Height

9.15mm

Minimum Operating Temperature

-55 °C

Product details

N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more