N-Channel MOSFET, 5 A, 650 V, 3-Pin TO-220 STMicroelectronics STP7N60M2

RS noliktavas nr.: 786-3814PRažotājs: STMicroelectronicsRažotāja kods: STP7N60M2
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Transistor Material

Si

Width

4.6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

15.75mm

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 1,45

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,754

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 5 A, 650 V, 3-Pin TO-220 STMicroelectronics STP7N60M2
Izvēlēties iepakojuma veidu

€ 1,45

Katrs (tiek piegadats Tubina) (bez PVN)

€ 1,754

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

N-Channel MOSFET, 5 A, 650 V, 3-Pin TO-220 STMicroelectronics STP7N60M2
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Penālis
5 - 20€ 1,45€ 7,25
25 - 45€ 1,35€ 6,75
50 - 120€ 1,25€ 6,25
125 - 245€ 1,10€ 5,50
250+€ 1,05€ 5,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

950 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

60 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Transistor Material

Si

Width

4.6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

15.75mm

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more