N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220 STMicroelectronics STP36NF06L

RS noliktavas nr.: 486-5671Ražotājs: STMicroelectronicsRažotāja kods: STP36NF06L
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-18 V, +18 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Typical Gate Charge @ Vgs

13 nC @ 5 V

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,768

Katrs (Paka ir 5) (bez PVN)

€ 0,929

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220 STMicroelectronics STP36NF06L
Izvēlēties iepakojuma veidu

€ 0,768

Katrs (Paka ir 5) (bez PVN)

€ 0,929

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 30 A, 60 V, 3-Pin TO-220 STMicroelectronics STP36NF06L
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-18 V, +18 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.4mm

Width

4.6mm

Typical Gate Charge @ Vgs

13 nC @ 5 V

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more