Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 62,50
€ 2,50 Katrs (tiek piegadats Tubina) (bez PVN)
€ 75,62
€ 3,025 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
25
€ 62,50
€ 2,50 Katrs (tiek piegadats Tubina) (bez PVN)
€ 75,62
€ 3,025 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
25
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
Daudzums | Vienības cena | Per Penālis |
---|---|---|
25 - 45 | € 2,50 | € 12,50 |
50 - 120 | € 2,25 | € 11,25 |
125 - 245 | € 2,05 | € 10,25 |
250+ | € 1,95 | € 9,75 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Height
15.75mm
Minimum Operating Temperature
-55 °C
Produkta apraksts