N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STMicroelectronics STP26N65DM2
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35.5 nC @ 10 V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,80
Katrs (Paka ir 5) (bez PVN)
€ 4,598
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 3,80
Katrs (Paka ir 5) (bez PVN)
€ 4,598
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 20 | € 3,80 | € 19,00 |
| 25 - 45 | € 3,60 | € 18,00 |
| 50 - 120 | € 3,40 | € 17,00 |
| 125 - 245 | € 3,20 | € 16,00 |
| 250+ | € 3,05 | € 15,25 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
190 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Width
4.6mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Typical Gate Charge @ Vgs
35.5 nC @ 10 V
Height
15.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.6V
Izcelsmes valsts
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products