Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
7.3 nC @ 5 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 29,40
€ 0,588 Katrs (Tubina ir 50) (bez PVN)
€ 35,57
€ 0,711 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 29,40
€ 0,588 Katrs (Tubina ir 50) (bez PVN)
€ 35,57
€ 0,711 Katrs (Tubina ir 50) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
50
Noliktavas stāvoklis patreiz nav pieejams
Daudzums | Vienības cena | Per Penālis |
---|---|---|
50 - 50 | € 0,588 | € 29,40 |
100 - 450 | € 0,441 | € 22,05 |
500 - 950 | € 0,374 | € 18,70 |
1000 - 4950 | € 0,33 | € 16,50 |
5000+ | € 0,322 | € 16,10 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
60 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
7.3 nC @ 5 V
Maximum Operating Temperature
+175 °C
Height
9.15mm
Minimum Operating Temperature
-55 °C
Produkta apraksts