Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.75mm
Produkta apraksts
N-channel MDmesh™ K5 series, SuperMESH5™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 15,25
€ 3,05 Katrs (tiek piegadats Tubina) (bez PVN)
€ 18,45
€ 3,69 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
5
€ 15,25
€ 3,05 Katrs (tiek piegadats Tubina) (bez PVN)
€ 18,45
€ 3,69 Katrs (tiek piegadats Tubina) (Ieskaitot PVN)
Industriālais iepakojums (Penālis)
5
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Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
800 V
Series
MDmesh K5, SuperMESH5
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.75mm
Produkta apraksts