STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STP10NM60N

RS noliktavas nr.: 760-9972Ražotājs: STMicroelectronicsRažotāja kods: STP10NM60N
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Transistor,MOSFET,N-channel,is
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Noliktavas stāvoklis patreiz nav pieejams

€ 14,25

€ 2,85 Katrs (Paka ir 5) (bez PVN)

€ 17,24

€ 3,448 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STP10NM60N
Izvēlēties iepakojuma veidu

€ 14,25

€ 2,85 Katrs (Paka ir 5) (bez PVN)

€ 17,24

€ 3,448 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MDmesh N-Channel MOSFET, 10 A, 600 V, 3-Pin TO-220 STP10NM60N
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
Transistor,MOSFET,N-channel,is
P.O.A.Katrs (bez PVN)

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

600 V

Series

MDmesh

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

550 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

19 nC @ 10 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™, 600V/650V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt
Transistor,MOSFET,N-channel,is
P.O.A.Katrs (bez PVN)