STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V, 3-Pin SOT-223 STN1NK80Z

RS noliktavas nr.: 714-1076PRažotājs: STMicroelectronicsRažotāja kods: STN1NK80Z
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

800 V

Package Type

SOT-223

Series

MDmesh, SuperMESH

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

3.5mm

Height

1.8mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,99

€ 0,199 Katrs (tiek piegadats Rulli) (bez PVN)

€ 2,41

€ 0,241 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V, 3-Pin SOT-223 STN1NK80Z
Izvēlēties iepakojuma veidu

€ 1,99

€ 0,199 Katrs (tiek piegadats Rulli) (bez PVN)

€ 2,41

€ 0,241 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 250 mA, 800 V, 3-Pin SOT-223 STN1NK80Z
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

800 V

Package Type

SOT-223

Series

MDmesh, SuperMESH

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

16 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.7 nC @ 10 V

Width

3.5mm

Height

1.8mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more