N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STMicroelectronics STL45N60DM6

RS noliktavas nr.: 192-4659Ražotājs: STMicroelectronicsRažotāja kods: STL45N60DM6
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

8.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

8.1mm

Height

0.9mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 4,10

Katrs (Rulli ir 3000) (bez PVN)

€ 4,961

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STMicroelectronics STL45N60DM6

€ 4,10

Katrs (Rulli ir 3000) (bez PVN)

€ 4,961

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET Transistor, 25 A, 600 V, 5-Pin PowerFLAT 8 x 8 HV STMicroelectronics STL45N60DM6
Noliktavas stāvoklis patreiz nav pieejams

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 8 x 8 HV

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

110 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

44 nC @ 10 V

Width

8.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

8.1mm

Height

0.9mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more