Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
8.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
8.1mm
Height
0.9mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,10
Katrs (Rulli ir 3000) (bez PVN)
€ 4,961
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 4,10
Katrs (Rulli ir 3000) (bez PVN)
€ 4,961
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
600 V
Package Type
PowerFLAT 8 x 8 HV
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.75V
Minimum Gate Threshold Voltage
3.25V
Maximum Power Dissipation
160 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±25 V
Typical Gate Charge @ Vgs
44 nC @ 10 V
Width
8.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
8.1mm
Height
0.9mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Izcelsmes valsts
China