STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6

RS noliktavas nr.: 192-4825Ražotājs: STMicroelectronicsRažotāja kods: STL10N60M6
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

€ 11,50

€ 2,30 Katrs (Paka ir 5) (bez PVN)

€ 13,92

€ 2,783 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
Izvēlēties iepakojuma veidu

€ 11,50

€ 2,30 Katrs (Paka ir 5) (bez PVN)

€ 13,92

€ 2,783 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 2,30€ 11,50
25 - 45€ 2,15€ 10,75
50 - 120€ 2,05€ 10,25
125 - 245€ 1,95€ 9,75
250+€ 1,85€ 9,25

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

600 V

Package Type

PowerFLAT 5 x 6 HV

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.75V

Minimum Gate Threshold Voltage

3.25V

Maximum Power Dissipation

48 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Length

6mm

Typical Gate Charge @ Vgs

8.8 nC @ 10 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

5mm

Height

0.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more